UHV cluster comprising several deposition and surface analysis chambers.
The IPS UHV (ultra-high vacuum) Analysis lab is a facility for in-situ growth studies combining a modular and extendable UHV cluster system for complementary surface analytics with several UHV growth chambers for in situ X-ray experiments during thin film and nanostructure formation.
Being situated in close proximity to the IPS beamlines and to a dedicated chemistry lab for sample preparation, the UHV Analysis lab allows for studying various nanosystems, optimizing the use of the beamlines, and ensures a fast feedback between complementary measurements and X-ray experiments.
The UHV cluster is a large ultra-high vacuum transfer system offering several docking stations for portable and stationary growth chambers. Samples with a maximum size of 25 mm can be inserted directly via three loadlocks. The central analysis and surface preparation chambers are accessible from all growth chambers. Here, samples can be prepared by Argon sputtering (limited to a surface area of 10x10 mm2) and annealing. They can be analyzed by standard surface characterization methods such as:
- reflection high energy electron diffraction (RHEED),
- low-energy electron diffraction (LEED),
- Auger electron spectroscopy (AES),
- X-ray photoelectron spectroscopy (XPS),
- UHV atomic force microscopy (AFM),
- UHV scanning tunneling microscopy (STM).
The UHV cluster is extendable and develops according to the demands of future experiments.