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Prof. Dr. Tilo Baumbach

phone: +49 721 608 26820
mail: tilo baumbachBrf0∂kit edu

Prof. Dr. Clemens Heske

phone: +49 721 608 28069
mail: clemens heskeZaw1∂kit edu

Margit Helma

phone: +49 721 608 26071
fax: +49 721 608 28677
mail: margit helmaJyp3∂kit edu

Welcome to the Institute for Photon Science and Synchrotron Radiation

Research at the IPS is focused on method-oriented research and development of X-ray imaging, spectroscopy, and scattering techniques and their application in areas of materials and life sciences and materials for information, transport, and energy technologies. Other core areas include the study of catalytic processes and imaging methods in the life sciences.

The IPS closely cooperates with other KIT institutes and leading national, and international research institutions and universities. Activities are embedded in the corresponding programs and research fields of the Helmholtz-Association. These activities include the development of state-of-the-art experimental techniques, and conducting both pioneer experiments for the test of new methodological and instrumentation concepts, as well as experimental campaigns for their systematic application. For this purpose, IPS operates beamlines and laboratories at the KIT Synchrotron Radiation Source, as well as at other selected synchrotron radiation sources world-wide.

Particular emphasis is placed on the scientific and technical education and professional development of students and staff. Research activities are closely linked to academic teaching and research within the KIT Faculties of Physics and Chemistry & Biosciences, as well as other universities.


Zinc speciation observed in situ during pulsed laser ablation in liquids


In situ X-ray scattering, X-ray imaging and X-ray spectroscopy with microsecond time resolution have been combined to clarify the speciation of zinc during ablation

In-situ XRD Characterization of Epitaxial Iron Oxide-based Thin Films grown by Pulsed-Laser Deposition


Hexagonal ferrite oxide materials are promising candidates for high-density, energy-efficient materials for information processing and storage. Using X-ray diffraction (reciprocal-space mapping), we have investigated the structural quality of epitaxial iron-oxide layers grown by pulsed-laser deposition.

Stress evolution during formation of metal/silicon interfaces


In collaboration with the University of Poitiers, we have developed a unique experimental approach combining real-time curvature measurements and synchrotron x-ray reflectivity and diffraction in order to identify the microstructural origins of the stress evolution during sputter deposition of thin films[1].