Efficient diameter enlargement of bulk AlN single crystals with high structural quality
Hartmann, C.; Kabukcuoglu, M. P.; Richter, C.; Klump, A.; Schulz, D.; Juda, U.; Bickermann, M.; Hänschke, D.; Schröder, T.; Straubinger, T.
2023. Applied Physics Express, 16 (7), Art.-Nr.: 075502. doi:10.35848/1882-0786/ace60e

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties
Roder, M.; Steiner, J.; Wellmann, P.; Kabukcuoglu, M.; Hamann, E.; Haaga, S.; Hänschke, D.; Danilewsky, A.
2023. Journal of Applied Crystallography, 56 (3), 776–786. doi:10.1107/S1600576723003291

Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction Imaging
Straubinger, T.; Hartmann, C.; Kabukcuoglu, M. P.; Albrecht, M.; Bickermann, M.; Klump, A.; Bode, S.; Hamann, E.; Haaga, S.; Hurst, M.; Schröder, T.; Hänschke, D.; Richter, C.
2023. Crystal Growth and Design, 23 (3), 1538–1546. doi:10.1021/acs.cgd.2c01131

Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method
Zou, J.; Fauler, A.; Senchenkov, A. S.; Kolesnikov, N. N.; Kirste, L.; Kabukcuoglu, M. P.; Hamann, E.; Cecilia, A.; Fiederle, M.
2021. Crystals, 11 (11), Article no: 1402. doi:10.3390/cryst11111402

X-ray characterization of self-standing bent Si crystal plates for Large Hadron Collider beam extraction
Camattari, R.; Romagnoni, M.; Bandiera, L.; Bagli, E.; Mazzolari, A.; Sytov, A.; Haaga, S.; Kabukcuoglu, M.; Bode, S.; Hänschke, D.; Danilewsky, A.; Baumbach, T.; Bellucci, V.; Guidi, V.; Cavoto, G.
2020. Journal of applied crystallography, 53 (2), 486–493. doi:10.1107/S1600576720002800

X-ray topo-tomography studies of linear dislocations in silicon single crystals
Asadchikov, V.; Buzmakov, A.; Chukhovskii, F.; Dyachkova, I.; Zolotov, D.; Danilewsky, A.; Baumbach, T.; Bode, S.; Haaga, S.; Hänschke, D.; Kabukcuoglu, M.; Balzer, M.; Caselle, M.; Suvorov, E.
2018. Journal of applied crystallography, 51 (6). doi:10.1107/S160057671801419X