Dr. Simon Bode


  1. Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction Imaging
    Straubinger, T.; Hartmann, C.; Kabukcuoglu, M. P.; Albrecht, M.; Bickermann, M.; Klump, A.; Bode, S.; Hamann, E.; Haaga, S.; Hurst, M.; Schröder, T.; Hänschke, D.; Richter, C.
    2023. Crystal Growth and Design, 23 (3), 1538–1546. doi:10.1021/acs.cgd.2c01131
  2. X-ray characterization of self-standing bent Si crystal plates for Large Hadron Collider beam extraction
    Camattari, R.; Romagnoni, M.; Bandiera, L.; Bagli, E.; Mazzolari, A.; Sytov, A.; Haaga, S.; Kabukcuoglu, M.; Bode, S.; Hänschke, D.; Danilewsky, A.; Baumbach, T.; Bellucci, V.; Guidi, V.; Cavoto, G.
    2020. Journal of applied crystallography, 53 (2), 486–493. doi:10.1107/S1600576720002800
  3. X-ray topo-tomography studies of linear dislocations in silicon single crystals
    Asadchikov, V.; Buzmakov, A.; Chukhovskii, F.; Dyachkova, I.; Zolotov, D.; Danilewsky, A.; Baumbach, T.; Bode, S.; Haaga, S.; Hänschke, D.; Kabukcuoglu, M.; Balzer, M.; Caselle, M.; Suvorov, E.
    2018. Journal of applied crystallography, 51 (6). doi:10.1107/S160057671801419X