The MOVPE-Laboratory (metalorganic vapour-phase epitaxy) is a facility for production of single-crystalline or polycrystalline thin films of III/V semiconductors, currently in construction/commisioning at the KIT Synchrotron. The MOVPE-Lab. is designed for the growth of complex III-nitride semiconductor and optoelectronic structures, such as AlN/AlGaN/GaN/InGaN materials for UV-Visible LEDs. A key aspect of the MOVPE facility will be the possibility to employ specially designed chambers which allow characterisation of III/V structures using real-time in situ XRD during growth.
Generally a non-reactive carrier gas (typically H2) transports the MOVPE precursors (eg. trimethyl gallium, ammonia) into the reactor, where they undergo pyrolysis or chemical reaction and absorb onto the semiconductor wafer surface, resulting in their incorporation into the epitaxial structure of the semiconductor crystal lattice.
Reactants are transported to the NANO beamline and in situ MOVPE reactor chamber via a gas piping system.
Within the DFG funded cooperation CHOPIN, current MOVPE research is concerned with the growth dynamics and diffusion mechanisms in nitrides and their influence on optoelectronic properties of InGaN/AlgGaN/GaN quantum structures.